n-p-n transistor : There are two segments of n-type semiconductor-emitter and collector-separated by a segment of p-type semiconductor or the base.Over time, a new transistor was invented called the Bipolar Junction Transistor or BJT.Ī transistor is a semiconductor device having three doped regions-emitter, collector, and base. The first junction transistor, the p-n junction, was invented by William Shockley in 1951. Their transistor was a point-contact transistor. Semiconductors are small, consume low power, operate at low voltage, have a long life, and have high reliability. This solid-state semiconductor device was invented in 1930 to overcome the problem of external heating for the flow of current.
This kind of vacuum tube consumes high power, has a limited life, is very bulky, and operates at a high voltage. There are some drawbacks of vacuum tubes-electrons flow only in one direction, from the cathode to the anode. In vacuum tubes, the supply of electrons is from the heating of the cathode and the flow of electrons is by varying the voltage between its different electrodes. Before the invention of the transistor in 1948, vacuum tubes were used to switch electric signals and power.
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